Items where Author is "Bablu K. Ghosh"

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 19.

Article

Bablu K. Ghosh and Syafiqa Nasir and Tze, Kenneth Kin Teo and Ismail Saad (2021) ZnO thickness and ZnTe back contact effect of CdTe thin film solar cell Voc and efficiency progression. Materials Research Express, 8 (116405). pp. 1-7. ISSN 2053-1591

Swapan Ghosh and Bablu K. Ghosh (2020) Fossil Fuel Consumption Trend and Global Warming Scenario: Energy Overview. Global Journal of Engineering Sciences, 5 (2). pp. 1-5. ISSN 2641-2039

Ismail Saad and Mohd. Zuhir H and Bablu K. Ghosh and Nurmin Bolong (2020) High Performance Vertically Aligned Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells. IEEE Xplore.

Bablu K. Ghosh and Abdul I. A. Rani and Khairul A. Mohamad and Ismail Saad (2020) Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device. Electronic Materials Letters. pp. 1-9.

Ismail Saad and Mohd Zuhir Hamzah and Andee Hazwani Syazana Bacho and C., Bun Seng and A. M. Khairul and Bablu K. Ghosh and Nurmin Bolong (2017) Enhanced reliability of vertical strained impact ionization MOSFET incorporating dielectric pocket for ultra-sensitive biosensor applications. Advanced Science Letters, 23 (11). pp. 11247-11251. ISSN 1936-6612

Bablu K. Ghosh and Saiful S. M. Zainal and Khairul Anuar Mohamad and Ismail Saad (2016) InGaN photocell significant efficiency enhancement on Si – an influence of interlayer physical properties. International Journal of Energy Research, 40 (9). pp. 1271-1279. ISSN 1099-114X

Bablu K. Ghosh and ToruTanikawa and Akihiro Hashimoto and Akio Yamamoto and Yoshifumi Ito (2003) Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs. Journal of Crystal growth, 249 (3-4). pp. 422-428.

Nurmin Bolong and Ismail Saad and Z. Hamzah and B. Seng and K. Anuar and Bablu K. Ghosh and Razhwan Ismail (2014) Mitigating breakdown voltage with dual channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS).

Nurmin Bolong and Bablu K. Ghosh and U. Hashim and C. Bun Seng and Ismail Saad and H.M. Zuhir and Khairul Anuar Mohamad and Razhwan Ismail (2014) Breakdown voltage reduction analysis with adopting dual channel vertical strained sige impact ionization mosfet (VESIMOS). International Journal of Simulation: Systems, Science & Technology, 15 (2). pp. 40-45.

Ismail Saad and Nurmin Bolong and P.Divya and Bablu K. Ghosh and Teo, Kenneth Tze Kin (2011) Design and simulation analysis of vertical double-gate MOSFET (VDGM) structure for nano-device application. International Journal of Simulation: Systems, Science and Technology, 12 (3). pp. 7-11. ISSN 1473-8031

Bablu K. Ghosh and Saiful S. M. Zainal and Ismail Saad and Khairul Anuar Mohamad (2016) InGaN photocell significant efficiency enhancement on Si-an influence of interlayer physical properties. International Journal of Energy Research, 40 (9). pp. 1271-1279. ISSN 1099-114X

Bablu K. Ghosh and Saiful Sapri Mohd Zainal and Ismail Saad and Khairul Anuar Mohamad (2015) Investigation of harmonized layers (Hls) impact on quantum efficiency for N or P Type emitter of Csi solar detector. WSEAS Transactions on Environment and Development, 11. pp. 1-7. ISSN 1790-5079

Conference or Workshop Item

Bablu K. Ghosh and Ismail Saad and Khairul Anuar Mohamad and A.Wong and T. Kinchin (2012) Photo Detector Junction properties and Dynamic Aptness Analysis – Computational Study. In: 2012 International Symposium on Computer Applications and Industrial Electronics (ISCAIE 2012), 3-4 December 2012, Kota Kinabalu, Sabah.

Bablu K. Ghosh and Ismail Saad and Khairul Anuar Mohamad and Nurmin Bolong and Nurfarariyanti Parimon and Afishah Alias and Mohd Zuhir Hamzah (2012) Compatibility Issues of Si Technology with Higher Band Gap Materials for RF Applications. In: 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), 19-21 September 2012, Kuala Lumpur, Malaysia.

Bablu K. Ghosh and Ismail Saad (2011) High luminescence efficient Ga polarity domain GaN realized on Si(lll) by MOVPE. In: IEEE-RSM20 11 Proc. 2011, Kota Kinabalu.

Nurmin Bolong and Ismail Saad and Bablu K. Ghosh and Z. Hamzah and B. Seng and K. Anuar (2013) Effects of S/D doping concentrations on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP). In: 1st International Conference on Artificial Intelligence, Modelling and Simulation, AIMS 2013 11/2014.

Nurmin Bolong and Ismail Saad and Khairul Anuar Mohamad and Bablu K. Ghosh and H.M. Zuhir and C Bun Seng and Razali Ismail and U. Hashim (2013) Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

Ismail Saad and H.M. Zuhir and Nurmin Bolong and Khairul Anuar Mohamad and Bablu K. Ghosh and Razali Ismail (2013) Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP). In: TENCON 2013 - 2013 IEEE Region 10 Conference (31194).

Research Report

Bablu K. Ghosh (2015) Modeling of enhanced ultraviolet (UV) band detector using Electrostatic Field Effect (ESF). (Unpublished)

This list was generated on Fri Mar 29 01:27:49 2024 +08.