Bablu K. Ghosh and Ismail Saad (2011) High luminescence efficient Ga polarity domain GaN realized on Si(lll) by MOVPE. In: IEEE-RSM20 11 Proc. 2011, Kota Kinabalu.
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Abstract
The stress and defect generation; hence luminescence efficiency of semiconductor materials is correlated. Even severe cracks are formed on the epilayer surface due to stress those impair the photoluminescence property of devices. So the process effect of GaN epilayer grown on Si(lll) is evaluated by different growth approaches and different interlayer's. Epilayer on thinner converted SiC tempiates is found to increases PL Ex. peak energy with broadening its line width whereas epilayer grown on porously converted GaN layer is found comparatively low PL Ex. peak energy with narrowing its line width. From Raman scattering analysis, it is also observed that the PL Ex. peak is not signifies actual stress level rather its reveals epilayer quality. PL Ex. Peak energy is found to increase with increasing thickness of epilayer grown on converted interlayer on Si substrate
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Keyword: | iso-electronic structure interlayer (pGaN), Si( lll), crystalline epitaxial |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Depositing User: | MDM FAUZIAH MATSIN |
| Date Deposited: | 27 Mar 2014 16:37 |
| Last Modified: | 09 Nov 2017 15:55 |
| URI: | https://eprints.ums.edu.my/id/eprint/8604 |
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