Items where Author is "Razali Ismail"

Article

Munawar Agus Riyadi and Ismail Saad and Razali Ismail (2010) Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET. Microelectronics Journal, 41 (12). pp. 827-833. ISSN 0026-2692 (In Press)

Ismail Saad and Razali Ismail (2008) Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. Microelectronics Journal, 39 (12). pp. 1538-1541. ISSN 0026-2692

Ismail Saad and Ima Sulaiman and Razali Ismail (2008) Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime. Sains Malaysiana, 37 (3). pp. 239-243. ISSN 0126-6039

Ismail Saad and M., L P Tan and A., C E Lee and Razali Ismail and Vijay K. Arora (2009) Scattering-limited and ballistic transport in a nano-CMOS circuit. Microelectronics Journal, 40 (3). pp. 581-583. ISSN 0026-2692

Ismail Saad and M., L P Tan and Ing, Hui Hii and Razali Ismail and Vijay K. Arora (2009) Ballistic mobility and saturation velocity in low-dimensional nanostructures. Microelectronics Journal, 40 (3). pp. 540-542. ISSN 0026-2692

Conference or Workshop Item

Ismail Saad and Munawar Agus Riyadi and Razali Ismail (2008) Silicon pillar thickness effect on vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method. In: 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008), 25-27 November 2008, Johor, Malaysia.

Riyadi, Munawar A. and Suseno, Jatmiko E. and Napiah, Zul Atfyi F.M. and Afifah Maheran A. Hamid and Ismail Saad and Razali Ismail (2010) Investigation of short channel immunity of fully depleted double gate MOS with vertical structure. In: 2010 IEEE International Conference on Semiconductor Electronics (ICSE 2010), 28-30 June 2010, Melaka, Malaysia.

Ismail Saad and Munawar A. Riyadi and Zul Atfyi F.M.N. and Afifah Maheran A. Hamid and Razali Ismail (2010) Enhanced performance of vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method. In: 2010 IEEE International Conference on Semiconductor Electronics (ICSE 2010), 28-30 June 2010, Melaka, Malaysia.

Ismail Saad and Razali Ismail (2010) Numerical simulation analysis of CMOS compatible process of 50 nm vertical single and double gate NMOSFET. In: International Conference on Advancement of Materials and Nanotechnology (ICAMN 2007), 29 May - 1 June 2007, Kedah, Malaysia.

Ismail Saad and Razak Mohd Ali Lee and Munawar Agus Riyadi and Razali Ismail (2009) Design and simulation analysis of nanoscale vertical MOSFET technology. In: 2009 IEEE Student Conference on Research and Development, SCOReD 2009, 16 November 2009 through 18 November 2009, Serdang, Selangor.

Ismail Saad and R. M. A., Lee and Munawar Agus Riyadi and Mohammad Taghi Ahmadi and Razali Ismail (2009) Numerical analysis of vertical double gate MOSFETs (VDGM) with dielectric pocket (DP) effects on silicon pillar for nanoscale transistor. In: International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, 18-21 November 2008, Selangor, Malaysia.

Ismail Saad and Munawar Agus Riyadi and Mohammad Taghi Ahmadi and Razali Ismail (2009) Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance. In: International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, 18-21 November 2008, Selangor, Malaysia.

Ismail Saad and Mohammad Taghi Ahmadi and Munawar Agus Riyadi and Razali Ismail and V. K. Arora (2009) Ballistic saturation velocity of quasi-2D Low- dimensional nanoscale field effect transistor (FET). In: International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, 18-21 November 2008, Selangor.

Munawar Agus Riyadi and Z. A. F. M. Napiah and Jatmiko Endro Suseno and Ismail Saad and Razali Ismail (2009) Body doping influence in vertical MOSFET design. In: 2009 Innovative Technologies in Intelligent Systems and Industrial Applications, (CITISIA) , 25-26 July 2009, Kuala Lumpur, Malaysia.

Ismail Saad and Mohammad Taghi Ahmadi and Razali Ismail and Vijay K. Arora (2008) Ballistic carrier transport in a quasi-two-dimensional nanoscale field effect transistor (FET). In: 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008), 25-27 November 2008, Johor, Malaysia.

Ismail Saad and Razak Mohd Ali Lee and Razali Ismail and Vijay K. Arora (2009) Physics-based modelling of ballistic transport in nanoscale transistor. In: 2009 3rd Asia International Conference on Modelling and Simulation (AMS), 25-26 May 2009, Bandung, Indonesia.

Munawar Agus Riyadi and Z. A. F. M. Napiah and Ismail Saad and Razali Ismail (2008) Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket. In: 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008), 25-27 November 2008, Johor, Malaysia.

Razali Ismail and Ismail Saad (2008) Self-aligned double-gate (DG) nanoscale vertical MOSFET'S with reduced parasitic capacitance. In: Smart Structures, Devices, and Systems IV, 10-12 December 2008, Melbourne, Australia.

Ismail Saad and Munawar Agus Riyadi and Razali Ismail and Vijay K. Arora (2008) Self-aligned double-gate (DG) vertical MOSFET's using oblique rotating implantation (ORI) method with reduced parasitic capacitance. In: 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008), 25-27 November 2008, Johor, Malaysia.

Ismail Saad and M. Taghi Ahmadi and A.R. Munawar and Razali Ismail and V. K. Arora (2009) Ballistic saturation velocity of quasi-2D low-dimensional nanoscale Field Effect Transistor (FET). In: International Conference on Nanoscience and Nanotechnology (NANO-SciTech 2008), 18-21 November 2008, Selangor, Malaysia.

Nurmin Bolong and Ismail Saad and Khairul Anuar Mohamad and Bablu K. Ghosh and H.M. Zuhir and C Bun Seng and Razali Ismail and U. Hashim (2013) Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium.

Ismail Saad and H.M. Zuhir and Nurmin Bolong and Khairul Anuar Mohamad and Bablu K. Ghosh and Razali Ismail (2013) Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP). In: TENCON 2013 - 2013 IEEE Region 10 Conference (31194).